LU
LumentumEpitaxy Process Engineer
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Before you apply
LocationJapan - Sagamihara
Work modeon-site
SeniorityMid
Experience1+ yrs
Company size10,000+ people
PostedJul 13, 2026 · 3mo ago
Verified live1d ago
At a glanceSummarised by Seekless from the posting.
BSc, MSc, PhD degree in electronics, electrical engineering, physics, or a related equivalent technical field
Bachelors and 2+ years of work experience, Masters and 1+ years of work experience, PhD no relevant work experience
III-V alloy materials such as InP, GaAs and GaN epitaxy experience for optical or electrical device development, especially having an accomplished skill for MOCVD and MBE process/equipment
On-time mindset
Experience and knowledge for various characterization technology in epitaxial layers
Fluent Japanese speaker and business level English skill including managing and discussion in on-line meeting, email communications, and documentation in English
Programming skills to sophisticate the epi process, in-situ control, data acquisition, and database handling is a plus
Skills
MOCVD
MBE
InP
GaAs
GaN
Veeco Lumina
About the company
It’s fun to work in a company where people truly BELIEVE in what they’re doing!
We’re committed to bringing passion and customer focus to the business.
If you like wild growth and working with happy, enthusiastic over-achievers, you’ll enjoy your career with us!
Responsibilities:
•
Launch SI process of EML epitaxy to support SAG front-end capacity ramp-up
•
Execute DoE and apply results to device qualification runs
•
Achieve process qualification by meeting specs on schedule
•
Develop automation and maximize yield/UPD
•
Optimize processes using the proven Veeco Lumina reactor
•
Develop new or modified InP-based epitaxy processes, defining growth conditions and equipment specifications
•
Plan and lead projects involving new concepts, automation technologies, and process innovations
Expected Background:
•
BSc, MSc, PhD degree in electronics, electrical engineering, physics, or a related equivalent technical field.
•
Bachelors and 2+ years of work experience, Masters and 1+ years of work experience. PhD. no relevant work experiences.
Expected Skill:
•
III-V alloy materials such as InP, GaAs and GaN epitaxy experience for optical or electrical device development, especially having an accomplished skill for MOCVD and MBE process/equipment.
•
On-time mindset
•
Experience and knowledge for various characterization technology in epitaxial layers.
•
Programming skills to sophisticate the epi process, in-situ control, data acquisition, and database handling is a plus.
•
Fluent Japanese speaker and business level English skill including managing and discussion in on-line meeting, email communications, and documentation in English.
Legal
We are an equal opportunity employer and value diversity at our company.
We do not discriminate on the basis of race, religion, color, national origin, sex, gender, gender expression, sexual orientation, age, marital status, veteran status, or disability status.
We will ensure that individuals with disabilities are provided reasonable accommodation to participate in the job application or interview process, to perform essential job functions, and to receive other benefits and privileges of employment.
Please contact us to request accommodation.